Röntgendiffraktometer

The aim of the announced multipurpose x-ray diffractometer is the structural analysis of semiconductors and thin films. The device needs to measure high resolution rocking curves (Omega-2Theta-scans) and reciprocal space maps of various semiconductor mate-rials where the focus lies on throughput. Additionally, x-ray reflectivity measurements must be possible to determine the layer thicknesses of thin film samples. Switching between the measurements need to be quick and reproducible without time-consuming conversions and alignment routines. The sample holder should be able to fit a semiconductor wafer with a size of up to 6”, whereby a xy-sample stage should be able map/scan the full area of a 4” wafer. The diffractometer needs a 4-circle geometry, preferably a Eulerian cradle. The exact technical details have to be evaluated and discussed again with the supplier of the X-ray diffractometer.